Thermal Decomposition of Hafnium Ethoxide-Mollecular Precursor for Hafnia Dielectric Thin Films
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Date
2012Author
Vâlcu (Herbei), Elena Emanuela
Mușat, Viorica
Leedham, Timothy
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The HfO2 thin-film is a very promising gate dielectric material for last
generation transistors. The paper presents the thermal decomposition of hafnium
ethoxide used as molecular precursor for obtaining hafnia thin films. The
investigated molecular precursor is a mixture of Hf3O(OC2H5)10 and
Hf4O(OC2H5)14 moisture sensitive amorphous powder.
The thermal decomposition of hafnium ethoxide precursor was investigated by
TG-DTG-DSC analysis from room temperature to 6000C in nitrogen atmosphere at
5K/min. The composition of gas products resulted during pyrolytic decomposition
has been studied by Fourier Transformation Infrared Spectroscopy (FTIR) and
Mass Spectroscopy (MS). In the gas products, hydrogen, methyl, ethyl, vinyl,
hydroxyl groups, acetic aldehyde and acetylene were identified. From mass
spectroscopy and FTIR data results that the loss of ethoxy groups from the
molecular precursor occurs in the decomposition steps between 200 and 375oC.
That suggests that in different steps, ligands from different coordination spheres are
lost.
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- 2012 fascicula9 nr3 [13]