On the Kinetics of Sol Gel Al:ZnO thin Films Crystallization on Silicon Substrate

dc.contributor.author	Mușat, Viorica
dc.contributor.author	Canejo, Joan
dc.contributor.author	Iticescu, Cătălina
dc.date.accessioned	2018-10-22T08:55:29Z
dc.date.available	2018-10-22T08:55:29Z
dc.date.issued	2006
dc.identifier.issn	1453 – 083X
dc.identifier.uri	http://10.11.10.50/xmlui/handle/123456789/5516
dc.description	The Annals of "Dunarea de Jos" University of Galati Fascicle IX Metallurgy and Materials Science ISSN 1453 – 083X. NR 2 – 2006	ro_RO
dc.description.abstract	Recently, there is a growing interest in applying ZnO thin films on silicon buffer substrates for p-n junction devices, optical wave guide, etc. A sol gel process is very attractive technique for obtaining oxide thin films, due to easy control of film composition, easy fabrication of large area thin films with low cost and the ability to coat-specific shapes substrates. This paper presents a kinetic investigation of the crystallization (550-650oC) of high preferential c-axis oriented ZnO thin films on p-type (100) silicon wafer substrate, from XRD data.	ro_RO
dc.language.iso	en	ro_RO
dc.publisher	Universitatea "Dunărea de Jos" din Galați	ro_RO
dc.subject	Al-doped ZnO	ro_RO
dc.subject	thin films	ro_RO
dc.subject	sol-gel	ro_RO
dc.subject	X-ray diffraction	ro_RO
dc.subject	atomic force microscopy	ro_RO
dc.subject	kinetic curves	ro_RO
dc.title	On the Kinetics of Sol Gel Al:ZnO thin Films Crystallization on Silicon Substrate	ro_RO
dc.type	Article	ro_RO